LPC11A14FBD48/301, NXP Semiconductors, LPC11A14FBD48/301, Datasheet - Page 52

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LPC11A14FBD48/301,

Manufacturer Part Number
LPC11A14FBD48/301,
Description
ARM Microcontrollers - MCU CortexM0 32bit 32KB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of LPC11A14FBD48/301,

Rohs
yes
Core
ARM Cortex M0
Processor Series
LPC11A
Data Bus Width
32 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
32 KB
Data Ram Size
8 KB
On-chip Adc
Yes
Operating Supply Voltage
2.6 V to 3.6 V
Package / Case
LQFP-48
Mounting Style
SMD/SMT
Factory Pack Quantity
250

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LPC11A14FBD48/301,
Manufacturer:
NXP Semiconductors
Quantity:
10 000
NXP Semiconductors
LPC11AXX
Product data sheet
10.3 External clock for oscillator in slave mode
Table 9.
T
specified below.
[1]
[2]
[3]
Table 10.
T
rate < 10 ppm for parts as specified below.
[1]
[2]
Remark: The input voltage on the XTALIN pin must be  1.95 V (see
connecting the oscillator to the XTALIN/XTALOUT pins also see
Table 11.
T
[1]
[2]
Symbol
N
Symbol
t
t
t
t
t
Symbol
f
T
t
t
t
t
ret
prog
ret
er
prog
osc
CHCX
CLCX
CLCH
CHCL
amb
amb
amb
cy(clk)
endu
Number of program/erase cycles.
Min and max values are valid for T
Programming times are given for writing 256 bytes to the flash. T
flash in blocks of 256 bytes. Flash programming is accomplished via IAP calls (see LPC11Axx user
manual). Execution time of IAP calls depends on the system clock and is typically between 1.5 and 2 ms
per 256 bytes.
Min and max values are valid for T
T
Parameters are valid over operating temperature range unless otherwise specified.
Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply
voltages.
=
=
=
amb
40
55
40
< +85 C.
Flash characteristics
EEPROM characteristics
Dynamic characteristic: external clock (XTALIN or CLKIN pin)
Parameter
oscillator frequency
clock cycle time
clock HIGH time
clock LOW time
clock rise time
clock fall time
C to +85
C to +125
C to +85
Parameter
endurance
retention time
programming
time
Parameter
retention time
erase time
programming
time
All information provided in this document is subject to legal disclaimers.
C. Based on JEDEC NVM qualification. Failure rate < 10 ppm for parts as
C; V
C; V
Rev. 4 — 30 October 2012
DD(3V3)
DD(3V3)
Conditions
powered
unpowered
sector or multiple
consecutive
sectors
Conditions
powered
unpowered
64 bytes
over specified ranges.
amb
amb
= 2.7 V to 3.6 V. Based on JEDEC NVM qualification. Failure
Conditions
= 40 C to +85 C only.
= 40 C to +85 C only.
[1]
[1]
[1]
[2]
Min
100000
100
150
-
[2][3]
32-bit ARM Cortex-M0 microcontroller
Min
1
40
T
T
-
-
cy(clk)
cy(clk)
[2]
[2]
[2]
[1]
Min
10
20
95
0.95
 0.4
 0.4
amb
< +85 C. Data must be written to the
Typ
200
300
1.1
1000000
Typ
20
40
100
1
Typ
-
-
-
-
-
-
Section
[2]
LPC11Axx
Table
© NXP B.V. 2012. All rights reserved.
12.3.
Max
25
1000
-
-
5
5
Max
-
-
105
1.05
Max
-
-
-
-
6). For
Unit
cycles
years
years
ms
Unit
MHz
ns
ns
ns
ns
ns
52 of 84
Unit
years
years
ms
ms

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