S5920Q Applied Micro Circuits Corporation, S5920Q Datasheet - Page 21

• Manufacturer Part Number: S5920Q
• Manufacturer: Applied Micro Circuits Corporation

Specifications of S5920Q

• Operating Temperature (min): 0C
• Operating Temperature Classification: Commercial
• Operating Temperature (max): 70C
• Package Type: PQFP
• Rad Hardened: No
• Lead Free Status / Rohs Status: Not Compliant

S5920 – PCI Product: Quality System Overview
AMCC’S RELIABILITY VIGIL
AMCC’s internal reliability vigil consists of three
phases:
New/Changed Wafer Processes and Material Quali-
fications
In order to initially release a device to production a
standard set of MIL-STD-883 tests must be completed
successfully. These tests include:
Wafer Process and Design
Package and Related Materials
AMCC adheres to MIL-I-38535 with regards to
changes.
If changes to production released devices are deter-
mined to be major, the appropriate qualification testing
must be successfully completed prior to change
approval.
In-Process Quality Monitors
AMCC Confidential and Proprietary
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New/changed processes and material qualifi-
cations
In-process Quality monitors
Periodic operating life and environmental test-
ing
Operating Life Method 1005
ESD Characterization Method 3015
Wire Bond Pull Method 2011
Thermal Shock or Method 1011 or 1010 Tem-
perature Cycling
Selected Subgroups of MIL-STD-883, Method
5005, Group B and D
CV plots
Airborne particle count
Bacteria, particle count, and resistivity on DI
water
ESD work stations and procedures
In-line testing of process gases
Temperature and humidity control
SPC in wafer fabrication
SEM of all military lots
Periodic Operating Life and Environmental Testing
Final Measure and Assurance of Quality
The cost of defects depends on when the failure
occurs. For example, costs rise significantly as unde-
tected defective ICs are integrated into systems. High
quality parts cut costs substantially, and the extra qual-
ity built into every AMCC device means added value to
our customers.
To achieve maximum quality, AMCC employs 100%
testing of all devices, followed by stringent QA
sampling.
AMCC performs QA sampling measurements at full
specification temperature, both DC and AC, to achieve
the tightest AQLs in the industry.
RADIATION HARDNESS
High energy radiation can cause structural changes in
the silicon and silicon dioxide crystal lattice by displac-
ing atoms from their normal crystal sites. These
changes can be responsible for increased junction
leakage, degraded transistor current gain (b), and
increased parasitic Si/SiO2 interface leakage currents.
The damage is generally induced by neutrons, X-rays,
and gamma rays. The effects of the damage induced
by this radiation can change both AC and DC parame-
ters, affect functional performance, and, in severe
cases, destroy the device.
Certain of AMCC’s high performance products are
inherently radiation resistant. The radiation resistance
of AMCC IC’s is the result of the small geometries, the
structure of the fabrication process itself, and the use
of ECL logic within the device. Contact your AMCC
representative regarding radiation resistance charac-
teristics associated with a specific product.
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Performed on a product from each process
family quarterly.
1000 hour operating life test (minimum),
Method 5005, Group C.
Temperature cycling per Method 1010, 100
cycles, condition C: –65°C/150°C
Environmental testing per AMCC standard test
procedures. Consult factory for further details.
Revision 1.01 – September 21, 2005
Data Book
DS1596
21