TWR-K60N512-KEIL Freescale Semiconductor, TWR-K60N512-KEIL Datasheet - Page 83

• Manufacturer Part Number: TWR-K60N512-KEIL
• Description: K60N512 Keil Tower Kit
• Manufacturer: Freescale Semiconductor
• Series: Kinetisr
• Type: MCUr

Specifications of TWR-K60N512-KEIL

• Rohs Compliant: YES
• Contents: 4 Boards, Documentation, DVD
• Peak Reflow Compatible (260 C): Yes
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• For Use With/related Products: Freescale Tower System, K60N512

The bytes not assigned to data flash via the FlexNVM Partition Code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
The endurance factor of a subsystem can be calculated for a partitioned device using the
formula:
Where:
Endurance_Subsystem = Maximum writes to EERAM for a given subsystem
E-Flash = allocated EEPROM backup for each subsystem (min 16KB, max 128KB)
EEESPLIT = Split factor for subsystem (A/B=0.5/0.5 or 0.25/0.75 or 0.125/0.875)
EEESIZE = allocated RAM for EEE (min 32B, max 4KB)
Record_Efficiency = 0.5 for 16-bit and 32-bit writes, 0.25 for 8-bit writes
Endurance_Factor = 10000 native cycles
Example 1:
A Kinetis device configured as in example 2 with 2 subsystems of 2KB of EERAM
backed up by 128 KB of E-Flash, provides 310K cycles with 16-bit or 32-bit writes for
each subsystem.
Endurance_subsystem = ((E-Flash-2*EEESPLIT*EEESIZE)/(EEESPLIT*EEESIZE)) *
Record_Efficiency*Endurance_Factor
Endurance_subsystem = ((128K-2(.5)(4KB))/(.5(4KB))*.5*10,000
Endurance_subsystem = ((124KB)/2KB)*5000
Endurance_subsystem = (62*5000)
Endurance_subsystem = 310,000
Example 2:
A Kinetis device configured as in example 3 with a subsystem of 2KB of EE backed up
by 64 KB of E-Flash, provides 150K cycles with 16-bit or 32-bit writes.
Endurance_subsystem = ((E-Flash-2*EEESPLIT*EEESIZE)/(EEESPLIT*EEESIZE)) *
Record_Efficiency*Endurance_Factor
Freescale Semiconductor
Endurance_Subsystem = ((E-Flash-2*EEESPLIT*EEESIZE)/
(EEESPLIT*EEESIZE)) *Record_Efficiency*Endurance_Factor
Kinetis Quick Reference User Guide, Rev. 0, 11/2010
Chapter 8 Using the FlexMemory
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