TWR-K60N512-KEIL Freescale Semiconductor, TWR-K60N512-KEIL Datasheet - Page 158

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TWR-K60N512-KEIL

Manufacturer Part Number
TWR-K60N512-KEIL
Description
K60N512 Keil Tower Kit
Manufacturer
Freescale Semiconductor
Series
Kinetisr
Type
MCUr

Specifications of TWR-K60N512-KEIL

Rohs Compliant
YES
Contents
4 Boards, Documentation, DVD
Peak Reflow Compatible (260 C)
Yes
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
For Use With/related Products
Freescale Tower System, K60N512
Introduction
Figure 17-1. Capacitive touch sensing electrode model
A common measurement method for capacitive touch sensing is the RC method. In this
method a large pullup resistor (approximately 1 MΩ) is connected to each electrode. The
processor or sensing ASIC measures the time it takes the electrode (or capacitor) to
become charged, when a finger approaches the electrode, the capacitance increases and
so does the charging time, this charge time change is considered a touch. The problem
with this method is the pullup. It is a weak pullup, and thus susceptible to external noise.
The TSI uses a different measurement method. It has two constant current sources, one
for charging and the other for discharging the electrode. This creates a triangular wave.
This wave has a configurable peak to peak voltage or delta voltage. Observe
Figure
17-2.
It shows the electrode current source oscillator structure.
Figure 17-2. TSI Electrode current source oscillator
Kinetis Quick Reference User Guide, Rev. 0, 11/2010
158
Freescale Semiconductor

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