PIC16F707-E/P Microchip Technology, PIC16F707-E/P Datasheet - Page 210

• Manufacturer Part Number: PIC16F707-E/P
• Description: 14KB Flash Program, MTouch, 32ch CSM, 1.8V-5.5V, 16MHz Internal Oscillator, 8b A
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 16Fr

Specifications of PIC16F707-E/P

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 36
• Program Memory Size: 14KB (8K x 14)
• Program Memory Type: FLASH
• Ram Size: 363 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 14x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 40-DIP (0.600", 15.24mm)
• Processor Series: PIC16F
• Core: PIC
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

PIC16F707/PIC16LF707
25.4
DS41418A-page 210
D130
D131
D132
D133
D134
D135
D135A
Legend:
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external
Param
No.
*
†
2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent
4: Including OSC2 in CLKOUT mode.
DC Characteristics: PIC16F707/PIC16LF707-I/E (Continued)
E
V
I
I
T
T
These parameters are characterized but not tested.
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
clock in RC mode.
normal operating conditions. Higher leakage current may be measured at different input voltages.
PPPGM
DDPGM
Sym.
PEW
RETD
P
PEW
TBD = To Be Determined
DC CHARACTERISTICS
Cell Endurance
V
Voltage on MCLR/V
Erase/Program
V
V
Current on MCLR/V
Erase/Write
Current on V
Write
Erase/Write cycle time
Characteristic Retention
V
Charging current
Source/sink capability when
charging complete
DD
DD
DD
CAP
for Read
for Bulk Erase
for Write or Row Erase
Capacitor Charging
Characteristic
DD
during Erase/
PP
PP
during
during
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
V
Min.
100
8.0
2.7
2.7
Preliminary
—
—
—
40
—
—
MIN
Typ†
200
0.0
1k
—
—
—
—
—
3
-40°C  T
Max.
9.0
5.0
5.0
2.8
—
—
—
—
—
—
—
A
A
 +85°C for industrial
 +125°C for extended
Units
Year
E/W
mA
mA
mA
ms

V
V
V
V
A
Temperature during programming:
10°C  T
Temperature during programming:
10°C  T
Temperature during programming:
10°C  T
V
V
voltage
Temperature during programming:
10°C  T
Temperature during programming:
10°C  T
Temperature during programming:
10°C  T
Provided no other specifications
are violated
MIN
MAX
 2010 Microchip Technology Inc.
= Minimum operating voltage
= Maximum operating
A
A
A
A
A
A
 40°C
 40°C
 40°C
 40°C
 40°C
 40°C
Conditions