M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 96

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

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Revision history
Table 46.
19-January-2010
25-March-2009
19-June-2009
20-May-2009
24-Nov-2008
Date
Document revision history
Version
01
02
03
04
05
Initial release.
Revised data in the following tables:
–
–
–
–
–
–
–
Corrected address ranges in
Revised values for the following parameters in the
Read AC
– tAVQV1 60, 70, and 80 ns AC Read Characteristics data from
– tGLQV 60, 70, and 80 ns AC Read Characteristics data from
– tEHQz and tGHQZ, 60, 70, and 80 ns: from 20, 20, and 20 ns to
– tBLQZ 80 ns from 25 to 30 ns.
Added table heading to
Changed LBGA to FBGA (package name change)
In
cycles, changed Erase Suspend Latency time from 35 µs to 45
µs.
Table 21: Program/erase times and program/erase endurance
cycles;
Table 27: DC
Table 28: Read AC
Table 29: Write AC characteristics, write enable
Table 30: Write AC characteristics, chip enable
Table 31: Reset AC
Table 36.: Ordering information
order information size from 128-Mbit to 256-Mbit.
from 20, 20, and 25 ns to 25, 25, and 30 ns, respectively;
20, 20, and 25 ns to to 25, 25, and 30 ns respectively;
25, 25, and 30 ns, respectively;
Table 21.: Program/erase times and program/erase endurance
characteristics:
characteristics;
characteristics;
characteristics.
Table 38.: Block addresses 128 -
Changes
Figure 4.: Block
scheme: corrected product
addresses;
controlled;
controlled;
Table 28.:
255.