M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 44

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Note:
Note:
44/97
The device remains in extended memory block mode until the Exit Extended Memory Block
command is issued or power is removed from the device. After power-up or an hardware
reset, the device reverts to read mode, and the commands issued to block 0 addresses will
properly address block 0.
The extended memory block can be protected by setting the extended memory block
protection bit to '0' (see
cannot be undone.
When the device is in the extended memory block mode, the VPP/WP pin cannot be used
for fast programming and the unlock bypass mode is not available (see Section 2.8:
VPP/write protect (VPP/WP)).
Enter Extended Memory Block command
The M29W256GH/L has one extra 128-word block (extended memory block) that can only
be accessed using the Enter Extended Memory Block command.
Three bus write cycles are required to issue the Extended Memory Block command. Once
the command has been issued the device enters the extended memory block mode where
all bus read or program operations are conducted on the extended memory block. Once the
device is in the extended block mode, the extended memory block is addressed by using
the addresses occupied by block 0 in the other operating modes (see
addresses 0 -
The device remains in extended memory block mode until the Exit Extended Memory Block
command is issued or power is removed from the device. After power-up or a hardware
reset, the device reverts to read mode, and the commands issued to block 0 addresses will
properly address block 0.
The extended memory block cannot be erased, and can be treated as one-time
programmable (OTP) memory.
In extended block mode, Erase, Chip Erase, Erase Suspend and Erase Resume commands
are not allowed.
To exit from the extended memory block mode the Exit Extended Memory Block command
must be issued.
The extended memory block can be protected by setting the extended memory block
protection bit to ‘1’ (see
cannot be undone.
When the device is in the extended memory block mode, the V
for fast programming and the unlock bypass mode is not available (see
VPP/write protect
Exit Extended Memory Block command
The Exit Extended Memory Block command is used to exit from the extended memory block
mode and return the device to read mode. Four bus write operations are required to issue
the command.
127).
(VPP/WP)).
Section 5.4: Lock
Section 5.4: Lock
register); however once protected the protection
register); however once protected the protection
PP
/WP pin cannot be used
Table 37: Block
Section 2.8: