M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 94

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 30. Enhanced buffered program flowchart and pseudocode
1. An Enhanced buffered program abort reset command must be issued to return the device in read mode.
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14243_m29256g
No
Buffered Program
at valid address
at valid address
command set
Read DQ6 at
valid address
DQ5 & DQ6
Enhanced
Read DQ6
DQ6 =
DQ5=1
toggle
toggle
Start
Read
twice
DQ6 =
Fail
Yes
Yes
Yes
No
No
Yes
No
DQ1 = 1
No
program address pair
Read Status Register
Enhanced Buffered
Program command,
Check Status Register
(DQ1, DQ5, DQ7) at
program address pair
Enhanced Buffered
start address (00),
last loaded address
Write buffer data,
Write next data,
Program Confirm,
last loaded address
Write next data,
block address
block address
Abort Write
(DQ5, DQ7) at
Fail or Abort
to buffer
DQ7 = Data
X = X-1
DQ7 = Data
X=255
X = 0
DQ5 = 1
(3)
No
No
No
Yes
No
(4)
(2)
(2)
Yes
Yes
Yes
Yes
Program aborted
Enhanced Buffered
Write to a different
Enhanced Buffered Program
Enhanced Buffered Program
block address
258 th write cycle of the
First cycle of the
Buffered Program
command
command
Exit Enhanced
command set
Program?
New
End
(1)
No
Yes