M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 43

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M29W256GH7AN6E

Manufacturer Part Number
M29W256GH7AN6E
Description
Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M29W256GH7AN6E

Package
56TSOP
Cell Type
NOR
Density
256 Mb
Architecture
Sectored
Block Organization
Symmetrical
Location Of Boot Block
Bottom|Top
Typical Operating Supply Voltage
3|3.3 V
Sector Size
128KByte x 256
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel

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6.4
6.4.1
6.4.2
Protection commands
Blocks can be protected individually against accidental program, erase or read operations.
The device block protection scheme is shown in
either
summary of the block protection commands.
Block protection commands are available both in 8-bit and 16-bit configuration.
The memory block and extended memory block protection is configured through the lock
register (see
The program commands referred to in the following sections must be used according to all
the Program command timings listed here:
Lock Register Command Set
The M29W256GL and M29W256GH offer a set of commands to access the lock register
and to configure and verify its content. See the following sections in conjunction with
Section 5.4: Lock
Enter Lock Register Command Set command
Three bus write cycles are required to issue the Enter Lock Register Command Set
command. Once the command has been issued, all bus read or program operations are
issued to the lock register.
An Exit Protection Command Set command must then be issued to return the device to read
mode (see
Lock Register Program and Lock Register Read command
The Lock Register Program command allows to configure the lock register. The
programmed data can then be checked by issuing a Lock Register Read command.
Extended Memory Block
The M29W256GH/L has one extra 128-word block (extended memory block). that can only
be accessed using the Enter Extended Memory Block command.
The extended memory block cannot be erased, and is one-time programmable (OTP)
memory.
In extended block mode, Erase, Chip Erase, Erase Suspend and Erase Resume commands
are not allowed.
To exit from the extended memory block mode the Exit Extended Memory Block command
must be issued.
Figure 16.: Write enable controlled program waveforms (8-bit
Figure 17.: Write enable controlled program waveforms (16-bit
Figure 18.: Chip enable controlled program waveforms (8-bit
Figure 19.: Chip enable controlled program waveforms (16-bit
Table
Section 6.4.7: Exit Protection Command Set
19, or
Section 5.4: Lock
register,
Table
20, depending on the configuration that is being used, for a
Table 19
register).
and
Table
20.
Figure 5: Software protection
command).
mode),
mode),
mode).
mode),
scheme. See
43/97

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