M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 35

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

6.2
6.2.1
6.2.2
Unlock Bypass command
The Unlock Bypass command is used to place the device in unlock bypass mode. When the
device enters the unlock bypass mode, the two initial unlock cycles required in the standard
program command sequence are no more needed, and only two write cycles are required to
program data, instead of the normal four cycles (see Note
This results in a faster total programming time.
Unlock Bypass command is consequently used in conjunction with the Unlock Bypass
Program command to program the memory faster than with the standard program
commands. When the cycle time to the device is long, considerable time saving can be
made by using these commands. Three bus write operations are required to issue the
Unlock Bypass command. When in unlock bypass mode, only the Unlock Bypass Program,
Unlock Bypass Block Erase, Unlock Bypass Chip Erase, and Unlock Bypass Reset
commands are valid:
Unlock Bypass Program command
The Unlock Bypass Program command can be used to program one address in the memory
array at a time. The command requires two bus write operations, the final write operation
latches the address and data and starts the program/erase controller.
The program operation using the Unlock Bypass Program command behaves identically to
the program operation using the Program command. The operation cannot be aborted, a
bus read operation to the memory outputs the status register (see
command
Unlock Bypass Block Erase command
The Unlock Bypass Block Erase command can be used to erase one or more memory
blocks at a time. The command requires two bus write operations instead of six using the
standard Block Erase command. The final bus write operation latches the address of the
block and starts the program/erase controller.
To erase multiple block (after the first two bus write operations have selected the first block
in the list), each additional block in the list can be selected by repeating the second bus
write operation using the address of the additional block.
The Unlock Bypass Block Erase command behaves in the same way as the Block Erase
command: the operation cannot be aborted, and a bus read operation to the memory
outputs the status register (see
The Unlock Bypass Program command can be issued to program addresses within the
memory.
The Unlock Bypass Block Erase command can then be issued to erase one or more
memory blocks.
The Unlock Bypass Chip Erase command can be issued to erase the whole memory
array.
The Unlock Bypass Write to Buffer Program command can be issued to speed up
programming operation.
The Unlock Bypass Reset command can be issued to return the memory to read mode.
In unlock bypass mode the memory can be read as if in read mode.
for details on the behavior).
Section 6.1.5: Block Erase command
4.
below
Section 6.1.8: Program
Table 12
command for details).
and
Table
35/97
13).