M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 34

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 13.
1. X don’t care, PA program address, PD program data, BAd any address in the block. All values in the table are in
2. These cells represent read cycles. The other cells are write cycles.
3. The auto select addresses and data are given in
4. In unlock bypass, the first two unlock cycles are no more needed (see
34/97
Read/Reset
Auto
Select
Program
Chip Erase
Block Erase
Erase/Program Suspend
Erase/Program Resume
Read CFI Query
hexadecimal.
method (16-bit
that is ‘don’t care’.
Manufacturer code
Device code
Extended memory
block protection
indicator
Block protection
status
(4)
Command
Standard commands, 16-bit mode
mode), and
Table 9: Block protection - auto select mode - programmer method (16-bit
6+
1
3
3
4
6
1
1
1
Add
555
555
555
555
555
55
X
X
X
1st
Data Add Data
AA
AA
AA
AA
AA
B0
F0
30
98
Table 7: Read electronic signature - auto select mode - programmer
2AA
2AA
2AA
2AA
2AA
2nd
55
55
55
55
55
Add
555
555
555
555
Bus operations
X
Table 16
3rd
Data Add Data Add Data Add Data
F0
A0
90
80
80
and
(2)(3)
Table
555
555
PA
4th
(1)
17).
(2)(3)
PD
AA
AA
2AA
2AA
mode), except for A9
5th
55
55
BAd
555
6th
10
30