M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 27

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 6.
1. PD is the programmed data (see
2. The lock register can only be programmed once.
Device returned
to Read mode
2. If the block NVPB is set to ‘0’, the block is protected, if set to ‘1’, it is unprotected.
3. If the block VPB is set to ‘0’, the block is protected, if set to ‘1’, it is unprotected.
Lock register program flowchart
Write Lock Register Exit command:
Add Dont' care, Data 90h
Add Dont' care, Data 00h
Table 10: Lock register
PASS:
Enter Lock Register command set:
Program Lock Register Data:
Add Dont' care (1) , Data PDh
YES
Add Dont' care, Data A0h
Write Unlock cycles:
Add 555h, Data AAh
Add 2AAh, Data 55h
Add 555h, Data 40h
Polling algorithm
bits).
DQ5 = 1
START
Write
Done
NO
YES
NO
the device to Read mode
Unlock cycle 1
unlock cycle 2
Reset
FAIL
to return
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