M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 64

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 28.
1. Only available upon customer request.
2. Sampled only, not 100% tested.
64/97
Symbol
t
t
t
t
GHQZ
t
ELQX
GLQX
EHQZ
t
t
t
t
t
t
t
t
t
t
AVQV1
t
EHQX
GHQX
BHQV
AVQV
ELQV
GLQV
AXQX
ELBH
BLQZ
AVAV
ELBL
(2)
(2)
(2)
(2)
t
t
t
t
t
t
FHQV
PAGE
t
ELFH
FLQZ
Alt.
ELFL
t
ACC
t
t
OLZ
t
t
t
OH
RC
t
OE
HZ
DF
LZ
E
Read AC characteristics
Address Valid to Next
Address Valid
Address Valid to Output
Valid
Address Valid to Output
Valid (page)
Chip Enable Low to Output
transition
Chip Enable Low to Output
Valid
Output Enable Low to
Output transition
Output Enable Low to
Output Valid
Chip Enable High to Output
Hi-Z
Output Enable High to
Output Hi-Z
Chip Enable, Output Enable
or Address transition to
Output transition
Chip Enable to BYTE Low
or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
Parameter
G = V
G = V
G = V
G = V
G = V
G = V
E = V
E = V
E = V
E = V
E = V
E = V
condition
,
,
,
Test
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
V
60 ns
CCQ
60
60
25
60
25
25
25
25
30
0
0
0
5
=V
(1)
M29W256GH, M29W256GL
CC
V
CCQ
70 ns
70
70
25
70
25
25
25
25
30
0
0
0
5
=V
CC
V
CCQ
80 ns
=1.65 V to
V
80
80
30
80
30
30
30
30
30
CC
0
0
0
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns