M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 59

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

9
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 24: Operating and AC measurement
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 24.
1. Only available upon customer request.
Figure 10. AC measurement load circuit
V
V
Ambient operating temperature
(temperature range 1)
Ambient operating temperature
(temperature range 6)
Load capacitance (C
Input rise and fall times
Input pulse voltages
Input and output timing ref. voltages
CC
CCQ
supply voltage
supply voltage (V
Operating and AC measurement conditions
Parameter
L
)
CCQ
V PP
0.1 µF
≤ V
CC
C L includes JIG capacitance
)
V CC
0.1 µF
DEVICE
UNDER
− 40
Min
2.7
2.7
TEST
70 or 60
conditions. Designers should check that the
0
0 to V
V
CCQ
M29W256GH, M29W256GL
30
CCQ
(1)
/2
Max
3.6
3.6
70
85
10
ns
C L
V CCQ
1.65
− 40
Min
AI05558b
2.7
0
25 k
25 k
0 to V
V
80 ns
CCQ
30
CCQ
/2
Max
3.6
3.6
70
85
10
Unit
°C
°C
pF
ns
V
V
V
V
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