M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 58

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

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Maximum ratings
Stressing the device above the rating listed in
cause permanent damage to the device. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the
operating sections of this specification is not implied.
Table 23.
1. Minimum voltage may undershoot to −2 V during transition and for less than 20 ns during transitions.
2. Maximum voltage may overshoot to V
3. V
Symbol
V
PPH
T
V
T
PPH
V
V
V
BIAS
CCQ
STG
CC
IO
ID
must not remain at 12 V for more than a total of 80 hrs.
(3)
Absolute maximum ratings
Temperature under bias
Storage temperature
Input or output voltage
Supply voltage
Input/output supply voltage
Identification voltage
Program voltage
Parameter
CC
(1)(2)
+ 2 V during transition and for less than 20 ns during transitions.
Table 23: Absolute maximum ratings
−0.6
−0.6
−0.6
−0.6
−0.6
Min
−50
−65
V
CC
Max
13.5
13.5
125
150
4
4
+ 0.6
may
Unit
°C
°C
V
V
V
V
V