M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 8

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

8/97
Table 2.
1. V
Figure 1.
1. Also see
operations.
PP
/WP may be left floating as it is internally connected to a pull-up resistor which enables program/erase
DQ8-DQ14
V
DQ0-DQ7
DQ15A−1
A0-A23
PP
Name
BYTE
V
Appendix A
V
V
NC
RP
RB
CCQ
/WP
W
E
G
CC
SS
Logic diagram
Signal names
(1)
and
Table 37
A0-A23
Address inputs
Data inputs/outputs
Data inputs/outputs
Data input/output or address input
Chip enable
Output enable
Write enable
Reset
Ready/busy output
Byte/word organization select
Input/output buffer supply voltage
Supply voltage
V
Ground
Not connected
BYTE
PP
RP
W
G
/write protect
E
for a full listing of the block addresses.
24
V CC
M29W256GH
M29W256GL
V CCQ
Description
V SS
V PP /WP
15
DQ0-DQ14
DQ15A-1
RB
AI13330b
Supply/Input
Direction
Supply
Supply
Output
Inputs
Input
Input
Input
Input
Input
I/O
I/O
I/O
–
–