HD64F3337YCP16V Renesas Electronics America, HD64F3337YCP16V Datasheet - Page 524

• Manufacturer Part Number: HD64F3337YCP16V
• Description: MCU 3/5V 60K PB-FREE 84-PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16V

• Core Size: 8-Bit
• Program Memory Size: 60KB (60K x 8)
• Oscillator Type: Internal
• Core Processor: H8/300
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• No. Of I/o's: 74
• Ram Memory Size: 1KB
• Cpu Speed: 16MHz
• No. Of Timers: 6
• No. Of Pwm Channels: 2
• Digital Ic Case Style: PLCC
• Controller Family/series: H8/300
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Table 20.18
Conditions: V
Item
High-voltage
(12 V) threshold
level
FV
Notes: *1 The listed voltages indicate the threshold level at which high-voltage application is
492
PP
* 1
current
*2 In the LH version, V
recognized. In boot mode and while flash memory is being programmed or erased, the
applied voltage should be 12.0 V
V
+85 C (wide-range specifications)
DC Characteristics of Flash Memory
CC
PP
= 12.0 0.6 V, T
= 2.7 V to 5.5 V
FV
During read
During
programming
During
erasure
PP
, MD
1
CC
= 3.0 V to 5.5 V, AV
*2
Symbol
V
I
a
PP
, AV
H
= –20 C to +75 C (regular specifications), T
CC
= 2.7 V to 5.5 V
Min
V
—
—
—
—
0.6 V.
CC
+ 2
CC
= 3.0 V to 5.5 V
Typ
—
—
10
20
20
*2
,V
SS
Max
11.4
10
20
40
40
= AV
SS
Unit
V
mA
mA
mA
= 0 V,
A
Test Conditions
V
V
a
PP
PP
= –40 C to
= 2.7 to 5.5 V
= 12.6 V