HD64F3337YCP16V Renesas Electronics America, HD64F3337YCP16V Datasheet - Page 483

• Manufacturer Part Number: HD64F3337YCP16V
• Description: MCU 3/5V 60K PB-FREE 84-PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16V

• Core Size: 8-Bit
• Program Memory Size: 60KB (60K x 8)
• Oscillator Type: Internal
• Core Processor: H8/300
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• No. Of I/o's: 74
• Ram Memory Size: 1KB
• Cpu Speed: 16MHz
• No. Of Timers: 6
• No. Of Pwm Channels: 2
• Digital Ic Case Style: PLCC
• Controller Family/series: H8/300
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

User Programming Mode Execution Procedure (Example)*: Figure 20.7 shows the execution
procedure for user programming mode when the on-board update routine is executed in RAM.
Note: * Do not apply 12 V to the FV
Note: * After the update is finished, when input of 12 V to the FV
1
2
3
4
5
6
7
8
from being accidentally programmed or erased due to program runaway etc., apply 12 V
to FV
overerasing due to program runaway can cause memory cells to malfunction. While 12 V
is applied, the watchdog timer should be running and enabled to halt runaway program
execution, so that program runaway will not lead to overprogramming or overerasing. For
details on applying, releasing, and shutting off V
Programming and Erasing Precautions (5).
Transfer on-board update routine
Branch to flash memory on-board
PP
on-board update routine in RAM
memory read setup time (t
executed. This is the required setup time from when the FV
+ 2 V) level after 12 V is released until flash memory can be read.
(exit user program
Set MD
Branch to application program
only when programming or erasing flash memory. Overprogramming or
(user program
(apply V
on-board update program
Figure 20.7 User Programming Mode Operation (Example)
Branch to flash memory
update routine in RAM
(update flash memory)
Execute flash memory
in flash memory *
Start from reset
1
Release FV
FV
and MD
IH
into RAM
PP
to V
= 12 V
ming
CC
0
ming
to 10 or 11
to MD
PP
mode)
mode)
PP
1
)
FRS
pin during normal operation. To prevent flash memory
) must elapse before any program in flash memory is
7. Change the voltage at the FV
8. After the on-board update of flash
3. Transfer the on-board update routine
4. Branch to the on-board update routine
5. Apply 12 V to the FV
6. Execute the flash memory on-board
Procedure
The flash memory on-board update
program is written in flash memory ahead
of time by the user.
1. Set MD1 and MD0 of the H8/3334YF
2. Branch to the flash memory on-board
memory.
update routine in RAM, to perform an
on-board update of the flash memory.
from 12 V to V
programming mode.
memory ends, execution branches to
an application program in flash
to 10 or 11, and start from a reset.
update program in flash memory.
into RAM.
that was transferred into RAM.
user programming mode.
PP
, see section 20.7, Flash Memory
PP
CC
PP
pin is released, the flash
, to exit user
pin reaches the (V
PP
pin, to enter
PP
pin
CC
451