HD64F3337YCP16V Renesas Electronics America, HD64F3337YCP16V Datasheet - Page 443

• Manufacturer Part Number: HD64F3337YCP16V
• Description: MCU 3/5V 60K PB-FREE 84-PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16V

• Core Size: 8-Bit
• Program Memory Size: 60KB (60K x 8)
• Oscillator Type: Internal
• Core Processor: H8/300
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• No. Of I/o's: 74
• Ram Memory Size: 1KB
• Cpu Speed: 16MHz
• No. Of Timers: 6
• No. Of Pwm Channels: 2
• Digital Ic Case Style: PLCC
• Controller Family/series: H8/300
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Hardware Protection: Suspends or disables the programming and erasing of flash memory, and
resets the flash memory control register (FLMCR) and erase block registers (EBR1 and EBR2).
Details of hardware protection are as follows.
Protection
Programing
voltage (V
protect
Reset and
standby
protect
Interrupt
protect
Notes: *1 Three modes: program-verify, erase-verify, and prewrite-verify.
19.4.9
If an interrupt occurs
FLMCR is set), the following operating states can occur.
If an interrupt is generated during programming or erasing, programming or erasing is aborted
to protect the flash memory. Since memory cell values after a forced interrupt are
indeterminate, the system will not operate correctly after such an interrut.
Program runaway may result because the vector table could not be read correctly in interrupt
exception handling during programming or erasure
*2 All blocks are erase-disabled. It is not possible to specify individual blocks.
*3 For details, see section 19.7, Flash Memory Programming and Erasing Precautions.
Interrupt Handling during Flash Memory Programming and Erasing
PP
)
Description
When 12 V is not applied to the FV
FLMCR, EBR1, and EBR2 are initialized,
disabling programming and erasing. To obtain
this protection, V
When a reset occurs (including a watchdog
timer reset) or standby mode is entered,
FLMCR, EBR1, and EBR2 are initialized,
disabling programming and erasing. Note that
RES input does not ensure a reset unless the
RES pin is held low for at least 20 ms at power-
up (to enable the oscillator to settle), or at least
ten system clock cycles (10ø) during operation.
To prevent damage to the flash memory, if
interrupt input occurs while flash memory is
being programmed or erased, programming or
erasing is aborted immediately. The settings in
FLMCR, EBR1, and EBR2 are retained. This
type of protection can be cleared only by a
reset.
*1
while flash memory is being programmed or erased (while the P or E bit of
PP
should not exceed V
PP
pin,
CC
*2
.
.
*3
Program
Disabled
Disabled
Disabled
Function
Erase
Disabled
Disabled
Disabled
*2
*2
*2
Verify
Disabled
Disabled
Enabled
*1
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