HD64F3337YCP16V Renesas Electronics America, HD64F3337YCP16V Datasheet - Page 460

• Manufacturer Part Number: HD64F3337YCP16V
• Description: MCU 3/5V 60K PB-FREE 84-PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16V

• Core Size: 8-Bit
• Program Memory Size: 60KB (60K x 8)
• Oscillator Type: Internal
• Core Processor: H8/300
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• No. Of I/o's: 74
• Ram Memory Size: 1KB
• Cpu Speed: 16MHz
• No. Of Timers: 6
• No. Of Pwm Channels: 2
• Digital Ic Case Style: PLCC
• Controller Family/series: H8/300
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes: *1 In this section, the application, release, and shutting-off of V
428
The V
The threshold level is between approximately V
When this flag is set, it becomes possible to write to the flash memory control register
(FLMCR) and the erase block registers (EBR1 and EBR2), even though the V
not yet have reached the programming voltage range of 12.0 0.6 V.
Do not actually program or erase the flash memory until V
voltage range.
The programming voltage range for programming and erasing flash memory is 12.0 0.6 V
(11.4 V to 12.6 V). Programming and erasing cannot be performed correctly outside this range.
When not programming or erasing the flash memory, ensure that the V
exceed the V
In this chip, the same pin is used for
is made to hardware standby mode. This happens not only in the normal operating modes
(modes 1, 2, and 3), but also when programming the flash memory with a PROM programmer.
When programming with a PROM programmer, therefore, use a programmer which sets this
pin to the V
No program runaway
When V
These power-on and power-off timing requirements should also be satisfied in the event of
a power failure and in recovery from a power failure. If these requirements are not
satisfied, overprogramming or overerasing may occur due to program runaway etc., which
could cause memory cells to malfunction.
*2 In the LH version, V
PP
Application: A rise in voltage from V
Release:
Shut-off:
flag is set and cleared by a threshold decision on the voltage applied to the FV
CC
PP
CC
level when not programming (FV
is applied, program execution must be supervised, e.g. by the watchdog timer.
voltage. This will prevent unintended programming and erasing.
A drop in voltage from 12 V 0.6 V to V
No applied voltage (floating).
CC
= 3.0 V to 5.5 V.
STBY
and FV
CC
CC
PP
to 12 V 0.6 V.
= 12 V).
+ 2 V to 11.4 V.
PP
. When this pin is driven low, a transition
PP
has reached the programming
CC
.
PP
are defined as follows.
PP
voltage does not
PP
voltage may
PP
pin.