HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 554

• Manufacturer Part Number: HD64F3337YCP16
• Description: IC H8 MCU FLASH 60K 84PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16

• Core Processor: H8/300
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• Package: 84PLCC
• Family Name: H8
• Maximum Speed: 16 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 74
• Interface Type: HIF/I2C/SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Error Protection: In error protection, an error is detected when microcontroller runaway occurs
during flash memory programming/erasing, or operation is not performed in accordance with the
program/erase algorithm, and the program/erase operation is aborted. Aborting the program/erase
operation prevents damage to the flash memory due to overprogramming or overerasing.
If the microcontroller malfunctions during flash memory programming/erasing, the FLER bit is set
to 1 in FLMCR2 and the error protection state is entered. The FLMCR1, FLMCR2, and EBR2
settings are retained, but program mode or erase mode is aborted at the point at which the error
occurred. Program mode or erase mode cannot be re-entered by re-setting the P or E bit. However,
PV and EV bit setting is enabled, and a transition can be made to verify mode.
FLER bit setting conditions are as follows:
1. When flash memory is read during programming/erasing (including a vector read or instruction
2. Immediately after the start of exception handling (excluding a reset) during
3. When a SLEEP instruction (including software standby) is executed during
4. When the bus is released during programming/erasing
Error protection is released only by a power-on reset.
Figure 21.14 shows the flash memory state transition diagram.
522
fetch)
programming/erasing
programming/erasing