HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 548

• Manufacturer Part Number: HD64F3337YCP16
• Description: IC H8 MCU FLASH 60K 84PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16

• Core Processor: H8/300
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• Package: 84PLCC
• Family Name: H8
• Maximum Speed: 16 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 74
• Interface Type: HIF/I2C/SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

21.4
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes can be made by
setting the PSU and ESU bits in FLMCR2, and the P, E, PV, and EV bits in FLMCR1.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM or external memory.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, EV, PV, E, and P bits in
21.4.1
Follow the procedure shown in the program/program-verify flowchart in figure 21.12 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 32 bytes at a
time.
For the wait times (x, y, z, , ,
control registers 1 and 2 (FLMCR1, FLMCR2) and the maximum number of writes (N), see Flash
Memory Characteristics in section 23, Electrical Characteristics.
Following the elapse of (x) s or more after the SWE bit is set to 1 in flash memory control
register 1 (FLMCR1), 32-byte program data is stored in the program data area and reprogram data
area, and the 32-byte data in the reprogram data area written consecutively to the write addresses.
The lower 8 bits of the first address written to must be H'00, H'20, H'40, H'60, H'80, H'A0, H'C0,
or H'E0. Thirty-two consecutive byte data transfers are performed. The program address and
program data are latched in the flash memory. A 32-byte data transfer must be performed even if
writing fewer than 32 bytes; in this case, H'FF data must be written to the extra addresses.
Next, the watchdog timer is set to prevent overprogramming in the event of program runaway, etc.
Set a value greater than (y + z +
program mode (program setup) is carried out by setting the PSU bit in FLMCR2, and after the
elapse of (y) s or more, the operating mode is switched to program mode by setting the P bit in
FLMCR1. The time during which the P bit is set is the flash memory programming time. Make a
program setting so that the time for one programming operation is within the range of (z) s.
516
2. Perform programming in the erased state. Do not perform additional programming on
Programming/Erasing Flash Memory
Program Mode
FLMCR1, and the ESU and PSU bits in FLMCR2, is executed by a program in flash
memory.
previously programmed addresses.
+ ) s as the WDT overflow period. After this, preparation for
after setting/clearing individual bits in flash memory