HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 464
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HD64F3337YCP16
Manufacturer Part Number
HD64F3337YCP16
Description
IC H8 MCU FLASH 60K 84PLCC
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Specifications of HD64F3337YCP16
Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
84-PLCC
Package
84PLCC
Family Name
H8
Maximum Speed
16 MHz
Operating Supply Voltage
5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
74
Interface Type
HIF/I2C/SCI
On-chip Adc
8-chx10-bit
On-chip Dac
2-chx8-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Company:
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Manufacturer:
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Quantity:
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HD64F3337YCP16V
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Table 19.18
Conditions: V
Item
High-voltage (12 V)
threshold level
FV
Notes: *1 The listed voltages indicate the threshold level at which high-voltage application is
Table 19.19
Conditions: V
Item
Programming time
Erase time
Number of writing/erasing count
Verify setup time 1
Verify setup time 2
Flash memory read setup time
Notes: *1 Set the times following the programming/erasing algorithm shown in section 19.
432
PP
current
*2 In the LH version, V
*2 The programming time is the time during which a byte is programmed or the P bit in the
*3 The erase time is the time during which all 32-kbyte blocks are erased or the E bit in the
*4 After power-on when using an external clock source, after return from standby mode, or
*5 In the LH version, V
*1, * 3
recognized. In boot mode and while flash memory is being programmed or erased, the
applied voltage should be 12.0 V
flash memory control register (FLMCR) is set. It does not include the program-verify
time.
flash memory control register (FLMCR) is set. It does not include the prewrite time
before erasure or erase-verify time.
after switching the programming voltage (V
setup time has elapsed before reading flash memory.
When V
when the FV
V
+85 C (wide-range specifications)
V
+85 C (wide-range specifications)
*1
DC Characteristics of Flash Memory
AC Characteristics of Flash Memory
CC
PP
CC
PP
= 12.0 0.6 V, T
= 12.0 0.6 V, T
= 2.7 V to 5.5 V
= 2.7 V to 5.5 V
*1, * 2
* 1
* 1
PP
FV
During read
During
programming
During erasure
is released, the flash memory read setup time is defined as the period from
PP
PP
, MD
pin has reached V
1
*4
CC
CC
= 3.0 V to 5.5 V, AV
= 3.0 V to 5.5 V, AV
*2
*5
a
a
Symbol
t
t
N
t
t
t
, AV
, AV
P
E
VS1
VS2
FRS
= –20 C to +75 C (regular specifications), T
= –20 C to +75 C (regular specifications), T
Symbol
V
I
WEC
PP
H
CC
CC
= 2.7 V to 5.5 V
= 2.7 V to 5.5 V
CC
Min
—
—
—
4
2
50
100
0.6 V.
Min
V
—
—
—
—
+ 2 V until flash memory can be read.
CC
+ 2
CC
CC
PP
Typ
50
1
—
—
—
—
—
= 3.0 V to 5.5 V
) from 12 V to V
= 3.0 V to 5.5 V.
Typ
—
—
10
20
20
*2
*5
,V
, V
SS
Max
1000
30
100
—
—
—
—
SS
Max
11.4
10
20
40
40
= AV
= AV
SS
CC
SS
Unit
s
Times
s
s
s
s
, make sure that this read
Unit
V
mA
mA
mA
= 0 V,
= 0 V,
A
Test Conditions
V
V
Test Conditions
V
V
a
a
CC
CC
= –40 C to
= –40 C to
PP
PP
< 4.5 V
= 2.7 to 5.5 V
= 12.6 V
4.5 V
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