R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 283

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
Table 6.10 Synchronous DRAM Interface Pins
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Pin
CS2
CS3
CS4
CS5
(OE)
UCAS
LCAS
A15 to A0
D15 to D0
With
Synchronous
DRAM Setting
RAS
CAS
WE
SDRAMφ
(CKE)
DQMU
DQML
A15 to A0
D15 to D0
Name
Row address strobe
Column address strobe
Write enable
Clock
Clock enable
Upper data mask enable Output
Lower data mask enable Output
Address pins
Data pins
Output
Output
Output
Output
Output
Output
I/O
I/O
Function
Row address strobe when
areas 2 to 5 are designated
as continuous synchronous
DRAM space
Column address strobe when
areas 2 to 5 are designated
as continuous synchronous
DRAM space
Write enable strobe when
areas 2 to 5 are designated
as continuous synchronous
DRAM space
Clock only for synchronous
DRAM
Clock enable signal when
areas 2 to 5 are designated
as continuous synchronous
DRAM space
Upper data mask enable for
16-bit continuous
synchronous DRAM space
access/data mask enable for
8-bit continuous synchronous
DRAM space access
Lower data mask enable
signal for 16-bit continuous
synchronous DRAM space
access
Row address/column address
multiplexed output pins
Data input/output pins
Section 6 Bus Controller (BSC)
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