R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 260

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.7.8
When DRAM is accessed, a RAS precharge time must be secured. With this LSI, one T
always inserted when DRAM space is accessed. From one to four T
setting bits TPC1 and TPC0 in DRACCR. Set the optimum number of T
DRAM connected and the operating frequency of this LSI. Figure 6.37 shows the timing when
two T
cycles.
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Read
Write
Note: n = 2 to 5
p
states are inserted. The setting of bits TPC1 and TPC0 is also valid for T
Precharge State Control
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
Figure 6.37 Example of Timing with Two-State Precharge Cycle
T
p1
(RAST = 0, CAST = 0)
Row address
T
p2
High
High
T
r
H8S/2426, H8S/2426R, H8S/2424 Group
p
states can be selected by
T
c1
Column address
p
cycles according to the
REJ09B0466-0350 Rev. 3.50
p
states in refresh
T
c2
p
state is
Jul 09, 2010