R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 282

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.8.3
If the ABW2 bit in ABWCR corresponding to an area designated as continuous synchronous
DRAM space is set to 1, areas 2 to 5 are designated as 8-bit continuous synchronous DRAM
space; if the bit is cleared to 0, the areas are designated as 16-bit continuous synchronous DRAM
space. In 16-bit continuous synchronous DRAM space, ×16-bit configuration synchronous DRAM
can be connected directly.
In 8-bit continuous synchronous DRAM space the upper half of the data bus, D15 to D8, is
enabled, while in 16-bit continuous synchronous DRAM space both the upper and lower halves of
the data bus, D15 to D0, are enabled.
Access sizes and data alignment are the same as for the basic bus interface: see section 6.5.1, Data
Size and Data Alignment.
6.8.4
Table 6.10 shows pins used for the synchronous DRAM interface and their functions.
Set the OEE bit in DRAMCR to 1 when the CKE signal is output.
Page 252 of 1372
Data Bus
Pins Used for Synchronous DRAM Interface
H8S/2426, H8S/2426R, H8S/2424 Group
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010