R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 1277

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
25.2.4
Table 25.23 A/D Conversion Characteristics
Conditions: V
Note:
25.2.5
Table 25.24 D/A Conversion Characteristics
Conditions: V
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Item
Resolution
Conversion time
Analog input capacitance
Permissible signal source impedance
Nonlinearity error
Offset error
Full-scale error
Quantization error
Absolute accuracy
Item
Resolution
Conversion time
Absolute accuracy
*
A/D Conversion Characteristics
D/A Conversion Characteristics
For 40 states at ADCLK = 16 MHz.
φ = 8 MHz to 33 MHz
φ = 8 MHz to 33 MHz
CC
CC
= 3.0 V to 3.6 V, AV
= 3.0 V to 3.6 V, AV
Min.
8
⎯
⎯
⎯
CC
CC
= 3.0 V to 3.6 V, V
= 3.0 V to 3.6 V, V
Typ.
8
⎯
±2.0
⎯
Min.
10
2.5*
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max.
8
10
±3.0
±2.0
Typ.
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ref
ref
= 3.0 V to AV
= 3.0 V to AV
Unit
Bit
μs
LSB
LSB
Section 25 Electrical Characteristics
Max.
10
⎯
15
5
±3.5
±3.5
±3.5
±0.5
±6.0
4 MΩ resistive load
Test Conditions
20 pF capacitive load
2 MΩ resistive load
CC
CC
, V
, V
SS
SS
= AV
= AV
Page 1247 of 1372
Unit
Bit
μs
pF
kΩ
LSB
LSB
LSB
LSB
LSB
SS
SS
= 0 V,
= 0 V,