MT48H8M16LFB4-10 Micron Technology Inc, MT48H8M16LFB4-10 Datasheet - Page 60

• Manufacturer Part Number: MT48H8M16LFB4-10
• Description: IC SDRAM 128MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M16LFB4-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 46: Single WRITE – With Auto Precharge
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
t CMH
t CKH
t AH
t AH
t AH
t RCD
t RAS
t RC
Notes: 1. For this example, BL = 1, and the WRITE burst is followed by a “manual” PRECHARGE.
t CK
T1
NOP 3
2. 15ns is required between <D
3. A9 and A11 are “Don’t Care.”
4. WRITE command not allowed or
t CL
NOP 3
T2
t CH
NOP 3
T3
ENABLE AUTO PRECHARGE
t CMS
t DS
COLUMN m 2
BANK
WRITE
T4
D
IN
t CMH
t DH
m
60
IN
t WR
m> and the PRECHARGE command, regardless of frequency.
t
RAS would be violated.
T5
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T6
NOP
t RP
128Mb: x16 Mobile SDRAM
T7
NOP
©2003 Micron Technology, Inc. All rights reserved.
Timing Diagrams
ACTIVE
ROW
ROW
BANK
T8
T9
NOP
DON’T CARE