MT48H8M16LFB4-10 Micron Technology Inc, MT48H8M16LFB4-10 Datasheet - Page 23

IC SDRAM 128MBIT 100MHZ 54VFBGA

MT48H8M16LFB4-10

Manufacturer Part Number
MT48H8M16LFB4-10
Description
IC SDRAM 128MBIT 100MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M16LFB4-10

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 12: READ-To-WRITE
Figure 13: READ-To-WRITE with Extra Clock Cycle
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
Note:
Note:
PRECHARGE command, a subsequent command to the same bank cannot be issued
until
the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE com-
mand issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts.
COMMAND
COMMAND
ADDRESS
ADDRESS
The READ command may be to any bank, and the WRITE command may be to any bank. If
a burst of one is used, then DQM is not required.
The READ command may be to any bank, and the WRITE command may be to any bank.
DQM
DQM
CLK
t
CLK
DQ
RP is met. Note that part of the row precharge time is hidden during the access of
DQ
T0
BANK,
COL n
READ
BANK,
COL n
T0
READ
CL = 3
CL = 3
T1
NOP
T1
NOP
T2
NOP
T2
TRANSITIONING DATA
NOP
23
T3
NOP
D
T3
OUT
t HZ
NOP
t CK
n
t HZ
D
DON’T CARE
OUT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
n
T4
BANK,
WRITE
COL b
D
IN
T4
b
NOP
t
DS
DON’T CARE
T5
BANK,
COL b
WRITE
128Mb: x16 Mobile SDRAM
D
IN
b
t
DS
©2003 Micron Technology, Inc. All rights reserved.
READs

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