MT48H8M16LFB4-10 Micron Technology Inc, MT48H8M16LFB4-10 Datasheet - Page 31

• Manufacturer Part Number: MT48H8M16LFB4-10
• Description: IC SDRAM 128MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M16LFB4-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BURST READ/SINGLE WRITE
Figure 25: Clock Suspend During WRITE Burst
Figure 26: Clock Suspend During READ Burst
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
Note:
Note:
The burst read/single write mode is entered by programming the write burst mode bit
(M9) in the mode register to a logic 1. In this mode, all WRITE commands result in the
access of a single column location (burst of one), regardless of the programmed burst
length. READ commands access columns according to the programmed burst length
and sequence, just as in the normal mode of operation (M9 = 0).
COMMAND
COMMAND
INTERNAL
INTERNAL
ADDRESS
ADDRESS
CLOCK
CLOCK
BL = 4 or greater, and DM is LOW.
CL = 2, BL = 4 or greater, and DQM is LOW.
CLK
CKE
DQ
CKE
CLK
D
IN
T0
BANK,
READ
COL n
NOP
T0
T1
NOP
BANK,
WRITE
COL n
T1
D
n
IN
T2
NOP
D
OUT
n
T2
T3
31
T3
n + 1
D
OUT
T4
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
NOP
n + 1
T4
D
NOP
IN
D
n + 2
OUT
DON’T CARE
DON’T CARE
T6
NOP
T5
n + 2
NOP
D
D
n + 3
IN
OUT
128Mb: x16 Mobile SDRAM
©2003 Micron Technology, Inc. All rights reserved.
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