MT48H8M16LFB4-10 Micron Technology Inc, MT48H8M16LFB4-10 Datasheet - Page 41

IC SDRAM 128MBIT 100MHZ 54VFBGA

MT48H8M16LFB4-10

Manufacturer Part Number
MT48H8M16LFB4-10
Description
IC SDRAM 128MBIT 100MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M16LFB4-10

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Quantity:
11 200
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Table 13: AC Functional Characteristics
Table 14: I
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
Parameter/Condition
Operating Current: Active Mode;
Burst = 2; READ or WRITE;
Standby Current: Power-Down Mode; All banks idle; CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
Operating Current: Burst Mode; Continuous burst;
READ or WRITE; All banks active
Auto Refresh Current
CKE = HIGH; CS# = HIGH
DEEP POWER-DOWN
Parameter
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH
command
Data-out to high-impedance from PRECHARGE command
Notes: 5, 6, 7, 8, 9, 11; notes appear on page 43
Notes: 1, 5, 6, 11, 13, 32; notes appear on page 43; V
DD
Specifications and Conditions
t
RC =
t
RC (MIN)
t
RCD met;
t
t
RC =
RFC = 15.625µs
t
RFC (MIN)
41
CL = 3
CL = 2
DD
= V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
t
t
DD
ROH(3)
ROH(2)
t
t
t
t
t
Symbol
t
t
CKED
t
t
DQM
DWD
t
t
t
t
DQD
MRD
DQZ
CCD
PED
DAL
DPL
BDL
CDL
RDL
Q = +1.8V ±0.1V
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
I
ZZ
1
2
3
4
5
6
Absolute Maximum Ratings
128Mb: x16 Mobile SDRAM
-8
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
150
100
50
35
50
10
-8
2
MAX
-10
©2003 Micron Technology, Inc. All rights reserved.
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
150
-10
50
30
50
80
10
2
Units
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Units
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
mA
mA
mA
mA
mA
µA
µA
19, 32, 33
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
Notes
15, 21
16, 21
16, 21
Notes
17
14
14
17
17
17
17
17
17
26
17
17
32
32
32
32
34

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