MT48H8M16LFB4-10 Micron Technology Inc, MT48H8M16LFB4-10 Datasheet - Page 27

IC SDRAM 128MBIT 100MHZ 54VFBGA

MT48H8M16LFB4-10

Manufacturer Part Number
MT48H8M16LFB4-10
Description
IC SDRAM 128MBIT 100MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M16LFB4-10

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 19: Random WRITE Cycles
Figure 20: WRITE-To-READ
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
Note:
Note:
In the case of a fixed-length burst being executed to completion, a PRECHARGE com-
mand issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts.
Fixed-length or full-page WRITE bursts can be truncated with the BURST TERMINATE
command. When truncating a WRITE burst, the input data applied coincident with the
BURST TERMINATE command will be ignored. The last data written (provided that
DQM is LOW at that time) will be the input data applied one clock previous to the
BURST TERMINATE command. This is shown in Figure 23 on page 29, where data n is
the last desired data element of a longer burst.
COMMAND
COMMAND
ADDRESS
ADDRESS
Each WRITE command may be to any bank. DQM is LOW.
The WRITE command may be to any bank, and the READ command may be to any bank.
DQM is LOW.
CLK
DQ
CLK
DQ
WRITE
BANK,
COL n
D
CL = 2
n
IN
WRITE
BANK,
COL n
D
T0
n
IN
n + 1
NOP
D
IN
WRITE
BANK,
COL a
T1
D
a
IN
BANK,
COL b
READ
BANK,
WRITE
COL x
D
x
IN
T2
27
NOP
DON’T CARE
WRITE
BANK,
COL m
D
m
T3
IN
NOP
D
OUT
b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DON’T CARE
NOP
b + 1
D
OUT
128Mb: x16 Mobile SDRAM
©2003 Micron Technology, Inc. All rights reserved.
READs

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