MT48H8M32LFB5-10:G Micron Technology Inc, MT48H8M32LFB5-10:G Datasheet - Page 56

• Manufacturer Part Number: MT48H8M32LFB5-10:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10:G

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

NOTE:
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
1. For this example, the burst length = 4.
2. A9 and A11 = “Don’t Care.”
DQMU, DQML
COMMAND
A0-A9, A11
See Table 14, Electrical Characteristics and Recommended AC Operating Conditions, on page 35.
BA0, BA1
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK 0
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
t CK
T1
NOP
Figure 47: Alternating Bank Write Accesses
ENABLE AUTO PRECHARGE
t CMS
t CL
t DS
COLUMN m 2
BANK 0
WRITE
T2
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
BANK 1
ACTIVE
IN
T4
ROW
ROW
m + 2
t DH
56
t RCD - BANK 1
t DS
D
IN
T5
NOP
m + 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR - BANK 0
ENABLE AUTO PRECHARGE
COLUMN b 2
t DS
BANK 1
WRITE
T6
D
IN
t DH
b
t DS
t RP - BANK 0
D
NOP
IN
T7
b + 1
t DH
1
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
t DS
D
IN
256Mb: x32
NOP
T8
b + 2
t DH
PRELIMINARY
t DS
D
BANK 0
ACTIVE
T9
IN
ROW
ROW
b + 3
t
t
RCD - BANK 0
WR - BANK 1
DON’T CARE
t DH