MT48H8M32LFB5-10:G Micron Technology Inc, MT48H8M32LFB5-10:G Datasheet - Page 36

• Manufacturer Part Number: MT48H8M32LFB5-10:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10:G

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Table 15: AC Functional Characteristics
Notes: 5, 6, 7, 8, 9, 11; notes appear on page 39
Table 16: I
Notes: 1, 5, 6, 11, 13; notes appear on page 39; V
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
PARAMETER/CONDITION
Operating Current: Active Mode; Burst = 2; READ or
WRITE;
t
Standby Current: Power-Down Mode; All banks idle; CKE
= LOW
Standby Current: Power-Down Mode; All banks idle; CKE
= HIGH
Standby Current: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after
Standby Current: Active Mode; CKE = LOW; CS# = HIGH;
All banks active; No accesses in progress
Operating Current: Burst Mode; Continuous burst; READ
or WRITE; All banks active, half DQs toggling every cycle.
Auto Refresh Current
CKE = HIGH; CS# = HIGH
DEEP POWER DOWN
PARAMETER
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or
REFRESH command
Data-out to high-impedance from PRECHARGE
command
RC =
t
RC (MIN)
DD
Specifications and Conditions – LC Version
t
RCD met; No accesses in progress
t
(MIN)
t
15.625µs
RFC =
RFC =
DD
t
RFC
= +3.3V ±0.3V, V
CL = 3
CL = 2
CL = 1
SYMBOL
I
I
I
I
DD
DD
36
DD
DD
I
I
I
I
DD
DD
DD
DD1
I
ZZ
2NS
3NS
2N
3N
4
5
6
SYMBOL
t
t
t
ROH(3)
ROH(2)
ROH(2)
t
t
t
t
t
t
CKED
t
t
t
DQM
DWD
t
t
t
t
DQD
MRD
DQZ
CCD
DAL
PED
BDL
CDL
RDL
DPL
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q = +3.3V ±0.3V
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
-75
-75
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
-
MAX
170
200
125
255
2.5
30
40
30
10
-8
-8
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
200
100
205
-10
2.5
45
30
40
30
10
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
-10
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
256Mb: x32
UNITS
mA
mA
mA
mA
mA
mA
mA
µA
µA
PRELIMINARY
UNITS
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
3, 12, 18, 19,
3, 18, 19, 32
3, 12, 19, 32
3, 18, 19, 32
NOTES
32, 33
NOTES
15, 21
16, 21
16, 21
32
17
14
14
17
17
17
17
17
17
26
17
17
17