MT48H8M32LFB5-10:G Micron Technology Inc, MT48H8M32LFB5-10:G Datasheet - Page 37

• Manufacturer Part Number: MT48H8M32LFB5-10:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10:G

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Table 17: I
Notes: 1, 5, 6, 11, 13; notes appear on page 39; V
Table 18: I
Notes: 1, 5, 6, 11, 13; notes appear on page 39; V
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
PARAMETER/CONDITION
Operating Current: Active Mode; Burst = 2; READ or
WRITE;
t
Standby Current: Power-Down Mode; All banks idle; CKE
= LOW
Standby Current: Power-Down Mode; All banks idle; CKE
= HIGH
Standby Current: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after
Standby Current: Active Mode; CKE = LOW; CS# = HIGH;
All banks active; No accesses in progress
Operating Current: Burst Mode; Continuous burst; READ
or WRITE; All banks active, half DQs toggling every cycle.
Auto Refresh Current
CKE = HIGH; CS# = HIGH
DEEP POWER DOWN
PARAMETER/CONDITION
Operating Current: Active Mode; Burst = 2; READ or
WRITE;
t
Standby Current: Power-Down Mode; All banks idle; CKE
= LOW
Standby Current: Power-Down Mode; All banks idle; CKE
= HIGH
Standby Current: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after
Standby Current: Active Mode; CKE = LOW; CS# = HIGH;
All banks active; No accesses in progress
Operating Current: Burst Mode; Continuous burst; READ
or WRITE; All banks active, half DQs toggling every cycle.
Auto Refresh Current
CKE = HIGH; CS# = HIGH
DEEP POWER DOWN
RC =
RC =
t
t
RC (MIN)
RC (MIN)
DD
DD
Specifications and Conditions – V Version
Specifications and Conditions – H Version
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
t
(MIN)
t
15.625µs
t
(MIN)
t
15.625µs
RFC =
RFC =
RFC =
RFC =
DD
DD
t
t
RFC
RFC
= +2.5 ±0.2V, V
= 1.8 ±0.1V, V
SYMBOL
SYMBOL
I
I
I
I
I
DD
DD
I
I
DD
DD
I
DD
DD
DD
DD
I
I
I
I
I
I
I
37
I
DD
DD
DD
DD1
DD
DD
DD
I
DD1
I
ZZ
ZZ
2NS
3NS
2NS
3NS
2N
3N
2N
3N
4
5
6
4
5
6
DD
DD
Q = 1.8V ±0.1V
Q = +2.5 ±0.2V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
-75
-75
MAX
MAX
170
200
125
255
125
150
210
2.5
2.5
30
40
30
10
-8
20
30
20
85
10
-8
145
200
100
200
-10
100
150
170
2.5
-10
2.5
30
40
10
30
65
10
30
20
20
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
256Mb: x32
UNITS
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
PRELIMINARY
3, 12, 18, 19,
3, 12, 18, 19,
3, 18, 19, 32
3, 12, 19, 32
3, 18, 19, 32
3, 18, 19, 32
3, 12, 19, 32
3, 18, 19, 32
NOTES
NOTES
32, 33
32, 33
32
32