MT48H8M32LFB5-10:G Micron Technology Inc, MT48H8M32LFB5-10:G Datasheet - Page 55

• Manufacturer Part Number: MT48H8M32LFB5-10:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10:G

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

NOTE:
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
DQMU, DQML
1. For this example, the burst length = 1, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <DIN m> and the PRECHARGE command, regardless of frequency.
3. A9 and A11 = “Don’t Care.”
4. WRITE command not allowed else
COMMAND
A0-A9, A11
See Table 14, Electrical Characteristics and Recommended AC Operating Conditions, on page 35.
BA0, BA1
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
t CMH
t CKH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
T1
NOP 3
Figure 46: Single Write – With Auto Precharge
t CL
NOP 3
T2
t
t CH
RAS would be violated.
NOP 3
T3
ENABLE AUTO PRECHARGE
t CMS
t DS
COLUMN m 2
BANK
WRITE
T4
D
IN
t CMH
t DH
m
55
t WR
T5
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T6
NOP
t RP
T7
NOP
MOBILE SDRAM
1
©2003 Micron Technology, Inc. All rights reserved.
ROW
ACTIVE
ROW
BANK
256Mb: x32
T8
PRELIMINARY
DON’T CARE
T9
NOP