MT48H8M32LFB5-10:G Micron Technology Inc, MT48H8M32LFB5-10:G Datasheet - Page 40

• Manufacturer Part Number: MT48H8M32LFB5-10:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10:G

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

NOTE:
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
1. The two AUTO REFRESH commands at T9 and T19 may be applied before either LOAD MODE REGISTER (LMR) command.
2. PRE = PRECHARGE command, LMR = LOAD MODE REGISTER command, AR = AUTO REFRESH command, ACT = ACTIVE
3. Optional refresh command.
4. The Load Mode Register for both MR/EMR and 2 Auto Refresh commands can be in any order. However, all must occur
5. Device timing is -10 with 100 MHz clock.
command, RA = Row Address, BA = Bank Address.
prior to an Active command.
See Table 14, Electrical Characteristics and Recommended AC Operating Conditions, on page 35.
DQML, DQMU
COMMAND
A0-A9, A11
BA0, BA1
A10
CKE
CLK
DQ
5
Power-up:
V
CLK stable
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T = 100µs
and
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CMS
CKS
Figure 31: Initialize And Load Mode Register
T0
NOP
t
High-Z
CMH
t
CKH
ALL BANKS
t
AS
PRE
T1
t AH
t
CK
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Load Extended
Mode Register
t AS
t AS t AH
BA0 = L,
BA1 = H
LMR 4
CODE
CODE
T3
t AH
t
MRD
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Load Mode
Register
BA0 = L,
BA1 = L
LMR 4
CODE
CODE
40
T5
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MRD
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ALL BANKS
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AS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
PRE 3
T7
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AH
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AR 4
T9
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1,2
AR 4
MOBILE SDRAM
T19
©2003 Micron Technology, Inc. All rights reserved.
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256Mb: x32
PRELIMINARY
DON’T CARE
ACT 4
T29
RA
RA
BA