C8051F930-TB Silicon Laboratories Inc, C8051F930-TB Datasheet - Page 60
C8051F930-TB
Manufacturer Part Number
C8051F930-TB
Description
BOARD TARGET/PROTO W/C8051F930
Manufacturer
Silicon Laboratories Inc
Type
MCUr
Specifications of C8051F930-TB
Contents
Board
Processor To Be Evaluated
C8051F930
Processor Series
C8051F9xx
Data Bus Width
8 bit
Interface Type
I2C, UART, SPI
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
0.9 V to 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
C8051F930
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1472
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Table 4.10. Temperature Sensor Electrical Characteristics
V
Table 4.11. Voltage Reference Electrical Characteristics
V
60
Linearity
Slope
Slope Error*
Offset
Offset Error*
Temperature Sensor Turn-On
Time
Supply Current
*Note: Represents one standard deviation from the mean.
Output Voltage
VREF Turn-on Time
Supply Current
Output Voltage
VREF Short-Circuit Current
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
VREF Turn-on Time 3
Supply Current
Input Voltage Range
Input Current
DD
DD
= 1.8 to 3.6V V,
= 1.8 to 3.6 V,
Parameter
Parameter
–
40 to +85 °C unless otherwise specified.
–
40 to +85 °C unless otherwise specified.
Internal Precision Reference (REFSL[1:0] = 00, REFOE = 1)
External Reference (REFSL[1:0] = 00, REFOE = 0)
Internal High Speed Reference (REFSL[1:0] = 11)
–40 to +85 °C,
V
–40 to +85 °C,
V
Load = 0 to 200 µA to AGND
4.7 µF tantalum, 0.1 µF ceramic
bypass, settling to 0.5 LSB
0.1 µF ceramic bypass, settling to
0.5 LSB
no bypass cap, settling to 0.5 LSB
Sample Rate = 300 ksps; VREF =
3.0 V
DD
DD
Temp = 25 °C
Temp = 25 °C
= 1.8–3.6 V
= 1.8–3.6 V
Conditions
Conditions
Rev. 1.1
1.645
Min
1.60
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0
1025
1.680
3.40
Typ
1.65
5.25
1.7
Typ
200
400
300
±1
40
18
35
3.5
15
25
15
—
—
1.715
Max
Max
1.70
V
—
—
—
—
—
—
—
1.5
—
—
—
—
—
—
—
—
DD
mV/°C
µV/°C
Units
µV/µA
Units
mV
mV
µA
°C
µs
mA
ms
µA
µA
µA
µs
µs
µs
V
V
V
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