S25FL512SAGMFIG13 Spansion, S25FL512SAGMFIG13 Datasheet - Page 74

• Manufacturer Part Number: S25FL512SAGMFIG13
• Description: Flash 512Mb 3V 133MHz Serial NOR Flash
• Manufacturer: Spansion

Specifications of S25FL512SAGMFIG13

• Rohs: yes
• Memory Type: Flash
• Memory Size: 512 MB
• Architecture: Uniform
• Timing Type: Asynchronous
• Interface Type: SPI
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SO-16

74
10.1.2
10.1.3
10.1.3.1
Read Device Identification
Register Read or Write
Note:
1. For Automotive In-Cabin temperature range (-40°C to +105°C), all Maximum frequency values are 5% slower than the Max values shown.
There are multiple commands to read information about the device manufacturer, device type, and device
features. SPI memories from different vendors have used different commands and formats for reading
information about the memories. The S25FL512S device supports the three most common device information
commands.
There are multiple registers for reporting embedded operation status or controlling device configuration
options. There are commands for reading or writing these registers. Registers contain both volatile and non-
volatile bits. Non-volatile bits in registers are automatically erased and programmed as a single (write)
operation.
Monitoring Operation Status
The host system can determine when a write, program, erase, suspend or other embedded operation is
complete by monitoring the Write in Progress (WIP) bit in the Status Register. The Read from Status
Register-1 command provides the state of the WIP bit. The program error (P_ERR) and erase error (E_ERR)
bits in the status register indicate whether the most recent program or erase command has not completed
successfully. When P_ERR or E_ERR bits are set to one, the WIP bit will remain set to one indicating the
device remains busy. Under this condition, only the CLSR, WRDI, RDSR1, RDSR2, and software RESET
Advanced Sector
Program Array
Reserved for
Erase Flash
Future Use
Protection
One Time
Function
Reset
Array
RFU
RFU
RFU
Reserved-18
Reserved-E5
Reserved-E6
Table 10.2 S25FL512S Command Set (sorted by function) (Sheet 2 of 2)
Command
PASSRD
DYBWR
PPBRD
ASPRD
PLBWR
DYBRD
PLBRD
PASSU
RESET
PASSP
Name
ERSP
ERRS
OTPR
OTPP
PPBP
PPBE
ASPP
MBR
MPM
4SE
BE
BE
SE
Bulk Erase
Bulk Erase (alternate command)
Erase 256 kB (3- or 4-byte address)
Erase 256 kB (4-byte address)
Erase Suspend
Erase Resume
OTP Program
OTP Read
DYB Read
DYB Write
PPB Read
PPB Program
PPB Erase
ASP Read
ASP Program
PPB Lock Bit Read
PPB Lock Bit Write
Password Read
Password Program
Password Unlock
Software Reset
Mode Bit Reset
Reserved for Multi-I/O-High Perf Mode (MPM)
Reserved
Reserved
Reserved
D a t a
S25FL512S
S h e e t
Command Description
( P r e l i m i n a r y )
S25FL512S_00_04 June 13, 2012
Value (Hex)
Instruction
DC
C7
D8
7A
4B
E0
E1
E2
E3
E4
2B
2F
A7
A6
E7
E8
E9
F0
FF
A3
E5
E6
60
75
42
18
Frequency
Maximum
(MHz)(1)
133
133
133
133
133
133
133
133
133
133
133
133
133
133
133
133
133
133
133
133
133
133
133