mc68hc08qa24 Freescale Semiconductor, Inc, mc68hc08qa24 Datasheet - Page 74

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mc68hc08qa24

Manufacturer Part Number
mc68hc08qa24
Description
M68hc08 Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet
Electrically Erasable Programmable Read-Only Memory (EEPROM)
6.3 Features
6.4 Functional Description
6.4.1 EEPROM Programming
Technical Data
72
Electrically Erasable Programmable Read-Only Memory (EEPROM)
EEPROM features include:
Addresses $0800–$09FF are EEPROM locations. The 512 bytes of
EEPROM can be programmed or erased without an external voltage
supply. The EEPROM has a lifetime of 10,000 write-erase cycles in the
non-redundant mode. Reliability (data retention) is further extended if
the redundancy option is selected. EEPROM cells are protected with a
non-volatile, 128-byte, block protection option. These options are stored
in the EEPROM non-volatile register (EENVR) and are loaded into the
EEPROM array configuration register (EEACR) after reset or a read of
EENVR. The EEPROM array can also be disabled to reduce current.
The unprogrammed state is a logic 1. Programming changes the state to
a logic 0. Only valid EEPROM bytes in the non-protected blocks and
EENVR can be programmed. When the array is configured in the
redundant mode, programming the first 256 bytes addresses will also
program the last 256 bytes addresses with the same data. Programming
the EEPROM in the non-redundant mode is recommended. Program the
data to both locations before entering the redundant mode.
Byte, block, or bulk erasable
Non-volatile redundant array option
Non-volatile block protection option
Non-volatile MCU configuration bits
On-chip charge pump for programming/erasing
Freescale Semicon-
MC68HC08QA24

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