ATtiny85 Atmel Corporation, ATtiny85 Datasheet - Page 17

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ATtiny85

Manufacturer Part Number
ATtiny85
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATtiny85

Flash (kbytes)
8 Kbytes
Pin Count
8
Max. Operating Frequency
20 MHz
Cpu
8-bit AVR
# Of Touch Channels
3
Hardware Qtouch Acquisition
No
Max I/o Pins
6
Ext Interrupts
6
Usb Speed
No
Usb Interface
No
Spi
1
Twi (i2c)
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
4
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
Yes
Crypto Engine
No
Sram (kbytes)
0.5
Eeprom (bytes)
512
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8 to 5.5
Operating Voltage (vcc)
1.8 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
2
Output Compare Channels
5
Pwm Channels
6
32khz Rtc
No
Calibrated Rc Oscillator
Yes

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5.3.2
5.3.3
5.3.4
5.3.5
2586N–AVR–04/11
Atomic Byte Programming
Split Byte Programming
Erase
Write
The write access times for the EEPROM are given in
tion, however, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In heavily fil-
tered power supplies, V
device for some period of time to run at a voltage lower than specified as minimum for the clock
frequency used. See
problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to
details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
Using Atomic Byte Programming is the simplest mode. When writing a byte to the EEPROM, the
user must write the address into the EEAR Register and data into EEDR Register. If the EEPMn
bits are zero, writing EEPE (within four cycles after EEMPE is written) will trigger the erase/write
operation. Both the erase and write cycle are done in one operation and the total programming
time is given in
tions are completed. While the device is busy with programming, it is not possible to do any
other EEPROM operations.
It is possible to split the erase and write cycle in two different operations. This may be useful if
the system requires short access time for some limited period of time (typically if the power sup-
ply voltage falls). In order to take advantage of this method, it is required that the locations to be
written have been erased before the write operation. But since the erase and write operations
are split, it is possible to do the erase operations when the system allows doing time-critical
operations (typically after Power-up).
To erase a byte, the address must be written to EEAR. If the EEPMn bits are 0b01, writing the
EEPE (within four cycles after EEMPE is written) will trigger the erase operation only (program-
ming time is given in
completes. While the device is busy programming, it is not possible to do any other EEPROM
operations.
To write a location, the user must write the address into EEAR and the data into EEDR. If the
EEPMn bits are 0b10, writing the EEPE (within four cycles after EEMPE is written) will trigger
the write operation only (programming time is given in
remains set until the write operation completes. If the location to be written has not been erased
before write, the data that is stored must be considered as lost. While the device is busy with
programming, it is not possible to do any other EEPROM operations.
The calibrated Oscillator is used to time the EEPROM accesses. Make sure the Oscillator fre-
quency is within the requirements described in
page
32.
“Atomic Byte Programming” on page 17
Table 5-1 on page
Table 5-1 on page
“Preventing EEPROM Corruption” on page 19
CC
is likely to rise or fall slowly on Power-up/down. This causes the
21. The EEPE bit remains set until the erase and write opera-
21). The EEPE bit remains set until the erase operation
“OSCCAL – Oscillator Calibration Register” on
and
Table 5-1 on page
“Split Byte Programming” on page 17
Table 5-1 on page
ATtiny25/45/85
for details on how to avoid
21. A self-timing func-
21). The EEPE bit
for
17

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