PIC16F767-E/ML Microchip Technology, PIC16F767-E/ML Datasheet - Page 209

• Manufacturer Part Number: PIC16F767-E/ML
• Description: IC,MICROCONTROLLER,8-BIT,PIC CPU,CMOS,LLCC,28PIN,PLASTIC
• Manufacturer: Microchip Technology
• Series: PIC® 16Fr

Specifications of PIC16F767-E/ML

• Rohs Compliant: YES
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 25
• Program Memory Size: 14KB (8K x 14)
• Program Memory Type: FLASH
• Ram Size: 368 x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

18.0
Absolute Maximum Ratings †
Ambient temperature under bias.............................................................................................................-40°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Voltage on MCLR with respect to V
Voltage on RA4 with respect to V
Total power dissipation (Note 1) ...............................................................................................................................1.0W
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB and PORTE (combined) (Note 3) ....................................................200 mA
Maximum current sourced by PORTA, PORTB and PORTE (combined) (Note 3)...............................................200 mA
Maximum current sunk by PORTC and PORTD (combined) (Note 3) .................................................................200 mA
Maximum current sourced by PORTC and PORTD (combined) (Note 3) ............................................................200 mA
 2004 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: Pdis = V
2: Voltage spikes at the MCLR pin may cause latch-up. A series resistor of greater than 1 k should be used
3: PORTD and PORTE are not implemented on the PIC16F737/767 devices.
ELECTRICAL CHARACTERISTICS
to pull MCLR to V
DD
with respect to V
IK
OK
(V
DD
I
SS
(V
< 0 or V
pin ..............................................................................................................................250 mA
O
pin ...........................................................................................................................300 mA
DD
< 0 or V
, rather than tying the pin directly to V
SS
SS
I
SS
...................................................................................................................0 to +12V
SS
> V
............................................................................................................ -0.3 to +6.5V
(Note 2) ..............................................................................................0 to +13.5V
O
(except V
DD
> V
)
DD
)
DD
, MCLR and RA4) .......................................... -0.3V to (V
DD
x {I
DD
DD
– ∑ I
.
OH
} + ∑ {(V
DD
PIC16F7X7
– V
OH
) x I
DS30498C-page 207
OH
} + ∑(V
DD
OL
+ 0.3V)
20 mA
20 mA
x I
OL
)