D12312SVTEBL25 Renesas Electronics America, D12312SVTEBL25 Datasheet - Page 719

IC H8S MCU ROMLESS 100-QFP

D12312SVTEBL25

Manufacturer Part Number
D12312SVTEBL25
Description
IC H8S MCU ROMLESS 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of D12312SVTEBL25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTEBL25
HD6412312SVTEBL25
Section 17 ROM
Do not use interrupts while flash memory is being programmed or erased: When flash
memory is programmed or erased, all interrupt requests, including NMI, should be disabled to
give priority to program/erase operations.
Do not perform additional programming. Erase the memory before reprogramming: In on-
board programming, perform only one programming operation on a 128-byte programming unit
block. In programmer mode, too, perform only one programming operation on a 128-byte
programming unit block. Programming should be carried out with the entire programming unit
block erased.
Before programming, check that the chip is correctly mounted in the PROM programmer:
Overcurrent damage to the device can result if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
Do not touch the socket adapter or chip during programming: Touching either of these can
cause contact faults and write errors.
Rev.7.00 Feb. 14, 2007 page 685 of 1108
REJ09B0089-0700

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