MC9S08EL16CTJ Freescale Semiconductor, MC9S08EL16CTJ Datasheet - Page 49
![MCU 16KB FLASH SLIC 20TSSOP](/photos/12/26/122655/mc9s08el16ctj_sml.jpg)
MC9S08EL16CTJ
Manufacturer Part Number
MC9S08EL16CTJ
Description
MCU 16KB FLASH SLIC 20TSSOP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.DEMO9S08EL32.pdf
(356 pages)
Specifications of MC9S08EL16CTJ
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
20-TSSOP
Processor Series
S08EL
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
SCI, SPI, I2C, SLIC
Maximum Clock Frequency
200 KHz
Number Of Programmable I/os
16
Number Of Timers
2
Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08EL32AUTO, DEMO9S08EL32
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
For Use With
DEMO9S08EL32 - BOARD DEMO FOR 9S08 EL MCUDEMO9S08EL32AUTO - DEMO BOARD EL32 AUTO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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4.5.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if these two conditions are met:
Freescale Semiconductor
•
•
The next burst program command has been queued before the current program operation has
completed.
The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this FLASH memory consists of 64 bytes. A new burst block begins
at each 64-byte address boundary.
Burst Program Execution
PROGRAM AND
ERASE FLOW
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
Figure 4-2. Program and Erase Flowchart
TO BUFFER ADDRESS AND DATA
WRITE TO FLASH OR EEPROM
0
WRITE COMMAND TO FCMD
TO LAUNCH COMMAND
AND CLEAR FCBEF
WRITE TO FCDIV
WRITE 1 TO FCBEF
CLEAR ERROR
FACCERR ?
FPVIOL OR
FACCERR ?
START
FCCF ?
DONE
1
NO
(1)
(2)
0
YES
(2)
before checking FCBEF or FCCF.
(1)
Wait at least four bus cycles
after reset.
Required only once
ERROR EXIT
Chapter 4 Memory
49
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