MC9S08EL16CTJ Freescale Semiconductor, MC9S08EL16CTJ Datasheet - Page 49

• Manufacturer Part Number: MC9S08EL16CTJ
• Description: MCU 16KB FLASH SLIC 20TSSOP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08EL16CTJ

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-TSSOP
• Processor Series: S08EL
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: SCI, SPI, I2C, SLIC
• Maximum Clock Frequency: 200 KHz
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Operating Supply Voltage: 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08EL32AUTO, DEMO9S08EL32
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• For Use With: DEMO9S08EL32 - BOARD DEMO FOR 9S08 EL MCUDEMO9S08EL32AUTO - DEMO BOARD EL32 AUTO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.5.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if these two conditions are met:
Freescale Semiconductor
•
•
The next burst program command has been queued before the current program operation has
completed.
The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this FLASH memory consists of 64 bytes. A new burst block begins
at each 64-byte address boundary.
Burst Program Execution
PROGRAM AND
ERASE FLOW
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
Figure 4-2. Program and Erase Flowchart
TO BUFFER ADDRESS AND DATA
WRITE TO FLASH OR EEPROM
0
WRITE COMMAND TO FCMD
TO LAUNCH COMMAND
AND CLEAR FCBEF
WRITE TO FCDIV
WRITE 1 TO FCBEF
CLEAR ERROR
FACCERR ?
FPVIOL OR
FACCERR ?
START
FCCF ?
DONE
1
NO
(1)
(2)
0
YES
(2)
before checking FCBEF or FCCF.
(1)
Wait at least four bus cycles
after reset.
Required only once
ERROR EXIT
Chapter 4 Memory
49