MC9S08EL16CTJ Freescale Semiconductor, MC9S08EL16CTJ Datasheet - Page 48

• Manufacturer Part Number: MC9S08EL16CTJ
• Description: MCU 16KB FLASH SLIC 20TSSOP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08EL16CTJ

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-TSSOP
• Processor Series: S08EL
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: SCI, SPI, I2C, SLIC
• Maximum Clock Frequency: 200 KHz
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Operating Supply Voltage: 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08EL32AUTO, DEMO9S08EL32
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• For Use With: DEMO9S08EL32 - BOARD DEMO FOR 9S08 EL MCUDEMO9S08EL32AUTO - DEMO BOARD EL32 AUTO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 4 Memory
4.5.3
The FCDIV register must be initialized following any reset and any error flags cleared before beginning
command execution. The command execution steps are:
A partial command sequence can be aborted manually by writing a 0 to FCBEF any time after the write to
the memory array and before writing the 1 that clears FCBEF and launches the complete command.
Aborting a command in this way sets the FACCERR access error flag which must be cleared before
starting a new command.
A strictly monitored procedure must be obeyed or the command will not be accepted. This minimizes the
possibility of any unintended changes to the memory contents. The command complete flag (FCCF)
indicates when a command is complete. The command sequence must be completed by clearing FCBEF
to launch the command.
programming and sector erase abort.
48
1. Write a data value to an address in the FLASH or EEPROM array. The address and data
2. Write the command code for the desired command to FCMD. The six valid commands are blank
3. Write a 1 to the FCBEF bit in FSTAT to clear FCBEF and launch the command (including its
information from this write is latched into the FLASH and EEPROM interface. This write is a
required first step in any command sequence. For erase and blank check commands, the value of
the data is not important. For sector erase commands, the address can be any address in the
512-byte sector of FLASH or 8-byte sector of EEPROM to be erased. For mass erase and blank
check commands, the address can be any address in the FLASH or EEPROM memory. FLASH and
EEPROM erase independently of each other.
check (0x05), byte program (0x20), burst program (0x25), sector erase (0x40), mass erase (0x41),
and sector erase abort (0x47). The command code is latched into the command buffer.
address and data information).
Program and Erase Command Execution
1
Do not program any byte in the FLASH or EEPROM more than once after
a successful erase operation. Reprogramming bits in a byte which is already
programmed is not allowed without first erasing the sector in which the byte
resides or mass erasing the entire FLASH or EEPROM memory.
Programming without first erasing may disturb data stored in the FLASH or
EEPROM.
Excluding start/end overhead
Sector erase abort
Burst program
Byte program
Sector erase
Mass erase
Parameter
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
Figure 4-2
Table 4-5. Program and Erase Times
is a flowchart for executing all of the commands except for burst
Cycles of FCLK
NOTE
20,000
4000
9
4
4
Time if FCLK = 200 kHz
100 ms
20 μs
20 μs
20 ms
45 μs
1
1
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