AT91SAM9RL64-CU Atmel, AT91SAM9RL64-CU Datasheet - Page 211
AT91SAM9RL64-CU
Manufacturer Part Number
AT91SAM9RL64-CU
Description
IC ARM9 MCU 217-LFBGA
Manufacturer
Atmel
Series
AT91SAMr
Specifications of AT91SAM9RL64-CU
Core Processor
ARM9
Core Size
16/32-Bit
Speed
240MHz
Connectivity
EBI/EMI, I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
AC'97, LCD, POR, PWM, WDT
Number Of I /o
118
Program Memory Size
32KB (32K x 8)
Program Memory Type
ROM
Ram Size
72K x 8
Voltage - Supply (vcc/vdd)
1.08 V ~ 1.32 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
217-LFBGA
Processor Series
AT91SAMx
Core
ARM926EJ-S
Data Bus Width
32 bit
Data Ram Size
64 KB
Interface Type
2-Wire, SPI, SSC, USART
Maximum Clock Frequency
240 MHz
Number Of Programmable I/os
118
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JTRACE-ARM-2M, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
AT91SAM-ICE, AT91-ISP
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 6 Channel
Controller Family/series
AT91SAM9xxx
No. Of I/o's
118
Ram Memory Size
64KB
Cpu Speed
240MHz
No. Of Timers
1
Rohs Compliant
Yes
Package
217LFBGA
Device Core
ARM926EJ-S
Family Name
91S
Maximum Speed
240 MHz
Operating Supply Voltage
1.8|3.3 V
For Use With
AT91SAM9RL-EK - KIT EVAL FOR AT91SAM9RLAT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
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Manufacturer
Quantity
Price
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23.5.2
Figure 23-3. Read Burst, 32-bit SDRAM Access
6289C–ATARM–28-May-09
SDRAM Controller Read Cycle
SDRAMC_A[12:0]
D[31:0]
SDWE
SDCS
(Input)
SDCK
RAS
CAS
The SDRAM Controller allows burst access, incremental burst of unspecified length or single
access. In all cases, the SDRAM Controller keeps track of the active row in each bank, thus
maximizing performance of the SDRAM. If row and bank addresses do not match the previous
row/bank address, then the SDRAM controller automatically generates a precharge command,
activates the new row and starts the read command. To comply with the SDRAM timing param-
eters, additional clock cycles on SDCK are inserted between precharge and active commands
(t
uration register of the SDRAM Controller. After a read command, additional wait states are
generated to comply with the CAS latency (1, 2 or 3 clock delays specified in the configuration
register).
For a single access or an incremented burst of unspecified length, the SDRAM Controller antici-
pates the next access. While the last value of the column is returned by the SDRAM Controller
on the bus, the SDRAM Controller anticipates the read to the next column and thus anticipates
the CAS latency. This reduces the effect of the CAS latency on the internal bus.
For burst access of specified length (4, 8, 16 words), access is not anticipated. This case leads
to the best performance. If the burst is broken (border, busy mode, etc.), the next access is han-
dled as an incrementing burst of unspecified length.
RP
) and between active and read command (t
Row n
t
RCD
= 3
col a
CAS = 2
AT91SAM9R64/RL64 Preliminary
col b
Dna
col c
Dnb
RCD
col d
). These two parameters are set in the config-
Dnc
col e
Dnd
col f
Dne
Dnf
211
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