MT48H8M32LFB5-10 TR Micron Technology Inc, MT48H8M32LFB5-10 TR Datasheet - Page 72

• Manufacturer Part Number: MT48H8M32LFB5-10 TR
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-10 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 50: Alternating Bank Write Accesses
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
COMMAND
A0–A9, A11
BA0, BA1
DQM 0-3
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK 0
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t RCD - bank 0
t RAS - bank 0
t
t
RC - bank 0
RRD
t CK
Notes: 1. For this example, BL = 4.
T1
NOP
ENABLE AUTO PRECHARGE
2. A9 and A11 = “Don’t Care.”
t CMS
t CL
COLUMN m 2
t DS
See Table 15, Electrical Characteristics and Recommended AC Operating Conditions, on
page 48.
BANK 0
T2
WRITE
D
IN
t CMH
t DH
t CH
m
t DS
D
T3
IN
NOP
m + 1
t DH
t DS
D
BANK 1
ACTIVE
ROW
T4
ROW
IN
m + 2
t DH
72
t RCD - bank 1
1
t DS
D
T5
IN
NOP
m + 3
t DH
t WR - bank 0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ENABLE AUTO PRECHARGE
COLUMN b 2
t DS
BANK 1
WRITE
T6
D
IN
t DH
b
256Mb: x32 Mobile SDRAM
t DS
D
T7
NOP
IN
b + 1
t DH
t RP - bank 0
©2003 Micron Technology, Inc. All rights reserved.
t DS
D
T8
NOP
IN
DON’T CARE
Timing Diagrams
b + 2
t DH
t DS
D
BANK 0
T9
ACTIVE
ROW
ROW
IN
m + 3
t RCD - bank 0
t WR - bank 1
t DH