MT48H8M32LFB5-10 TR Micron Technology Inc, MT48H8M32LFB5-10 TR Datasheet - Page 11

IC SDRAM 256MBIT 100MHZ 90VFBGA

MT48H8M32LFB5-10 TR

Manufacturer Part Number
MT48H8M32LFB5-10 TR
Description
IC SDRAM 256MBIT 100MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M32LFB5-10 TR

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (8Mx32)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 3: Mode Register Definition
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
to ensure compatibility
with future devices.
*Should program
0
13
M13
BA1
M10 = “0, 0”
0
12
M12
BA0
Reserved* WB
11
M11
A11
10
M10
A10
M9
0
1
9
M9
A9
Op Mode
M8
8
A8
7
M7 M6
A7 A6
Programmed Burst Length
M8
0
Single Location Access
-
CAS Latency
6
Write Burst Mode
11
5
M5
A5
M7
0
-
4
M4
A4
M3
BT
M6-M0
Defined
0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3
M3
A3
-
M6
M2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
Burst Length
2
M2
M1
M5
A2
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
M0
M4
1
Operating Mode
Standard Operation
All other states reserved
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
M1
A1
0
M0
A0
Reserved
Reserved
Reserved
Full Page
M3 = 0
256Mb: x32 Mobile SDRAM
Burst Type
Interleaved
Sequential
1
2
4
8
Mode Register (Mx)
Address Bus
Burst Length
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
3
Reserved
Reserved
Reserved
Reserved
©2003 Micron Technology, Inc. All rights reserved.
M3 = 1
Register Definition
1
2
4
8

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