MT48H8M32LFB5-10 TR Micron Technology Inc, MT48H8M32LFB5-10 TR Datasheet - Page 50

• Manufacturer Part Number: MT48H8M32LFB5-10 TR
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-10 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18: I
Table 19: I
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
Parameter/Condition
Parameter/Condition
Operating current: active mode; Burst = 2; READ or
WRITE;
Standby current: power-down mode; All banks idle;
CKE = LOW
Standby current: power-down mode; All banks idle;
CKE = HIGH
Standby current: active mode; CKE = HIGH; CS# = HIGH;
All banks active after
Standby current: active mode; CKE = LOW; CS# = HIGH;
All banks active; No accesses in progress
Operating current: burst mode; continuous burst; READ
or WRITE; All banks active, half DQs toggling every cycle
Auto Refresh Current
CKE = HIGH; CS# = HIGH
Deep power-down
Operating current: active mode; Burst = 2; READ or
WRITE;
Standby current: power-down mode; All banks idle;
CKE = LOW
Standby current: power-down mode; All banks idle;
CKE = HIGH
Standby current: active mode; CKE = HIGH; CS# = HIGH;
All banks active after
Standby current: active mode; CKE = LOW; CS# = HIGH;
All banks active; No accesses in progress
Operating current: burst mode; Continuous burst; READ
or WRITE; All banks active, half DQs toggling every cycle
Auto Refresh Current
CKE = HIGH; CS# = HIGH
Deep power-down
t
t
RC =
RC =
t
t
Notes: 1, 5, 6, 11, 13; notes appear on page 54; V
Notes: 1, 5, 6, 11, 13; notes appear on page 54; V
RC (MIN)
RC (MIN)
DD
DD
Specifications and Conditions (V version)
Specifications and Conditions (H version)
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
t
t
RFC =
RFC = 15.625µs
t
t
RFC =
RFC = 15.625µs
t
RFC (MIN)
t
RFC (MIN)
Symbol
Symbol
I
I
I
I
I
I
I
I
50
DD
DD
DD
DD
I
DD
DD
I
I
I
I
DD
DD
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
I
I
ZZ
ZZ
2N
3N
2N
3N
2P
3P
2P
3P
DD
DD
1
4
5
6
1
4
5
6
= +2.5 ±0.2V, V
= 1.8 ±0.1V, V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
170
400
125
255
125
300
210
-75
-75
2.5
2.5
30
40
30
10
20
30
20
85
10
DD
MAX
MAX
DD
170
400
125
255
125
300
210
2.5
2.5
30
40
30
10
20
30
20
85
10
-8
-8
Q = 1.8V ±0.1V
Q = +2.5 ±0.2V
256Mb: x32 Mobile SDRAM
Electrical Specifications
145
400
100
200
100
300
170
-10
-10
2.5
2.5
30
40
10
20
30
20
65
10
30
©2003 Micron Technology, Inc. All rights reserved.
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
3, 12, 18, 19,
3, 12, 18, 19,
3, 18, 19, 28
3, 12, 19, 28
3, 12, 19, 28
3, 18, 19, 28
3, 18, 19, 28
3, 12, 19, 28
3, 12, 19, 28
3, 18, 19, 28
Notes
Notes
28, 29
28, 29
28
28
28
28