MT48H8M32LFB5-10 TR Micron Technology Inc, MT48H8M32LFB5-10 TR Datasheet - Page 46

IC SDRAM 256MBIT 100MHZ 90VFBGA

MT48H8M32LFB5-10 TR

Manufacturer Part Number
MT48H8M32LFB5-10 TR
Description
IC SDRAM 256MBIT 100MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M32LFB5-10 TR

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (8Mx32)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Specifications
Absolute Maximum Ratings
Table 11: Absolute Maximum Ratings
Table 12: DC Electrical Characteristics and Operating Conditions (LC version)
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
Parameter/Condition
Voltage on V
Voltage on Inputs, NC or I/O Balls
Operating Temperature
Storage Temperature
Supply Voltage
I/O Supply Voltage
Input High Voltage: Logic 1; All input
Input Low Voltage: Logic 0; All inputs
Output High Voltage: All inputs: Iout = -4mA
Output Low Voltage: All inputs: Iout = 4mA
Input Leakage Current:
Any input 0V ≤ V
Output Leakage Current: DQs are disabled; 0V ≤ V
Voltage/Temperature
Relative to V
Relative to V
Relative to V
Relative to V
Relative to V
Relative to V
T
T
Plastic
DD
Notes: 1, 5, 6; notes appear on page 54; V
A
A
/V
(Commercial)
(Industrial)
IN
DD
≤ V
Q Supply
DD
(All other balls not under test = 0V)
SS
SS
SS
SS
SS
SS
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
(3.3V)
(2.5V)
(1.8V)
(3.3V)
(2.5V)
(1.8V)
OUT
≤ V
DD
DD
= +3.3 ±0.3V, V
-0.35
-0.35
MIN
-40°
-55°
-0.5
-0.5
Q
46
-1
-1
Symbol
V
V
V
V
V
I
DD
V
OZ
DD
OH
I
OL
IH
IL
I
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
0.8 x V
V
Q = +3.3V ±0.3V
DD
MIN
-0.3
Q - 0.2
-5
-5
3
3
-
DD
+150°
MAX
+70°
+85°
+4.6
+3.6
+2.8
+4.6
+3.6
+2.8
256Mb: x32 Mobile SDRAM
Q
V
Electrical Specifications
DD
MAX
Q + 0.3
3.6
3.6
0.3
0.2
5
5
-
©2003 Micron Technology, Inc. All rights reserved.
Units
µA
µA
V
V
V
V
V
V
Units
V
V
V
V
V
V
C
C
C
Notes
22
22

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